Thomas Ernst - Selected Publications#

NB: IEDM (Int. Electron. device Meeting IEDM) is the key conference in his domain with 30% selection rate and published proceedings. Often published only in this conference some world firsts and relevant results.

Full list of publications

ON ULTIMATE CMOS:

Tunability of Parasitic Channel in Gate-All-Around Stacked Nanosheets, S. Barraud,T. Ernst, et al., 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA

Performance and design considerations for gate-all-around stacked-NanoWires FETs, S. Barraud,T. Ernst, et al., 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA

Novel 3D integration process for highly scalable Nano-Beam stacked-channels GAA (NBG) FinFETs with HfO2/TiN gate stack, T. Ernst et al., 2006 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA

"Ultimately thin double-gate SOI MOSFETs,", T. Ernst et al in IEEE Transactions on Electron Devices, vol. 50, no. 3, pp. 830-838, March 2003 (207 citations)

ON SENSORS:

Sensors and related devices for IoT, medicine and smart-living, T. Ernst et al., 2018 IEEE Symposium on VLSI Technology, Honolulu, HI, USA, 2018, pp. 35-36

Modeling and design of a fully integrated gas analyzer using a μgC and NEMS sensors, Martin, O., Gouttenoire, V., Villard, P., Colinet, E., Ernst, T. Sensors and Actuators, B: Chemical, 2014, 194, pp. 220–228

Neuron-Gated Silicon Nanowire Field Effect Transistors to Follow Single Spike Propagation within Neuronal Network, Delacour, C., Veliev, F., Crozes, T., Bres, G., Minet, J., Ionica, I., Ernst, T., Briançon-Marjollet, A., Albrieux, M. and Villard, C. (2021), Adv. Eng. Mater., 23: 2001226.

Multi-Wire Tri-Gate Silicon Nanowires Reaching Milli-pH Unit Resolution in One Micron Square Footprint., Accastelli, E.; Scarbolo, P.; Ernst, T.; Palestri, P.; Selmi, L.; Guiducci, C. Biosensors 2016,